| PART |
Description |
Maker |
| MA4X796 |
Silicon epitaxial planar type SILICON, VHF BAND, MIXER DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA3S795E |
Silicon epitaxial planar type 0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
Panasonic Semiconductor
|
| SSM5G09TU-14 |
Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MA2B27QB MA2B027 MA2B0270A MA2B0270B MA2B027B MA2B |
Silicon epitaxial planar type variable resistor SILICON, PIN DIODE, DO-35
CANKPT02E16-26SX
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MA3XD17 |
Silicon epitaxial planar type 0.3 A, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
Panasonic Semiconductor
|
| MA2C165 MA165 MA2C167 MA166 MA167 MA2C166 |
Silicon epitaxial planar type 0.1 A, 75 V, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| KDS112V |
SILICON EPITAXIAL TYPE DIODE
|
KEC(Korea Electronics)
|
| CRZ10 CRZ11 CRZ12 CRZ13 CRZ15 CRZ16 CRZ18 CRZ20 CR |
Zener Diode Silicon Epitaxial Type
|
Toshiba Semiconductor
|
| KDV142V-15 |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
